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Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

Identifieur interne : 00A728 ( Main/Repository ); précédent : 00A727; suivant : 00A729

Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

Auteurs : RBID : Pascal:04-0108965

Descripteurs français

Pascal (Inist)
- 6172J, 6855J, 8115H, 7350J, 7220J, Etude expérimentale, Indium composé, Semiconducteur III-V, Semiconducteur bande interdite large, Epitaxie jet moléculaire, Croissance semiconducteur, Couche mince semiconductrice, Mobilité Hall, Lacune, Piège électron.

English descriptors

KwdEn :
- Electron traps, Experimental study, Hall mobility, III-V semiconductors, Indium compounds, Molecular beam epitaxy, Semiconductor growth, Semiconductor thin films, Vacancies, Wide band gap semiconductors.

Abstract

We have used a low-energy positron beam to identify In vacancies in InN layers grown on Al₂O₃ by molecular beam epitaxy. Their concentration decreases from ∼5×10¹⁸ to below 10¹⁶ cm^-3 with increasing layer thickness (120-800 nm). The decrease in the vacancy concentration coincides with the increase in the electron Hall mobility, suggesting that In vacancies act as electron scattering centers. © 2004 American Institute of Physics.

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Le document en format XML

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<author><name sortKey="Oila, J" uniqKey="Oila J">J. Oila</name>
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<author><name sortKey="Kemppinen, A" uniqKey="Kemppinen A">A. Kemppinen</name>
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<author><name sortKey="Laakso, A" uniqKey="Laakso A">A. Laakso</name>
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<author><name sortKey="Saarinen, K" uniqKey="Saarinen K">K. Saarinen</name>
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<author><name sortKey="Egger, W" uniqKey="Egger W">W. Egger</name>
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<author><name sortKey="Lu, H" uniqKey="Lu H">H. Lu</name>
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<author><name sortKey="Schaff, W J" uniqKey="Schaff W">W. J. Schaff</name>
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<front><div type="abstract" xml:lang="en">We have used a low-energy positron beam to identify In vacancies in InN layers grown on Al<sub>2</sub>
O<sub>3</sub>
 by molecular beam epitaxy. Their concentration decreases from ∼5×10<sup>18</sup>
 to below 10<sup>16</sup>
 cm<sup>-3</sup>
 with increasing layer thickness (120-800 nm). The decrease in the vacancy concentration coincides with the increase in the electron Hall mobility, suggesting that In vacancies act as electron scattering centers. © 2004 American Institute of Physics.</div>
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Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

Influence of layer thickness on the formation of In vacancies in InN grown by molecular beam epitaxy

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri